PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME

A photoelectric conversion element (10) comprising an i layer (43) that is an intrinsic amorphous semiconductor layer formed in the back surface side of a substrate (40), said substrate being a crystalline semiconductor layer, a p layer (44) that is a p-type amorphous semiconductor layer formed on t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAWAMOTO, KUNIHIRO, KAWAKAMI, YOHEI
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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