SEMICONDUCTOR DEVICE WITH JFET WIDTH DEFINED BY TRENCH ISOLATION

A semiconductor device having a junction field-effect transistor (JFET) (100) includes a substrate (105) having a first-type semiconductor surface (106) including a topside surface (106a), and a top gate (110) of a second-type formed in the semiconductor surface. A first-type drain (120) and a first...

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Bibliographische Detailangaben

Hauptverfasser:	HU, BINGHUA, HAO, PINGHAI, PENDHARKAR, SAMEER
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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