LIGHT-EMITTING DIODE WITH ULTRA-HIGH BRIGHTNESS AND MANUFACTURING METHOD THEREFOR

A light-emitting diode with ultra-high brightness and a manufacturing method therefor, which solves the problem that it is difficult to take the brightness and electrical property into account at the same time in an AlInGaP four-element LED structure. The light-emitting diode comprises: a conductive substrate (200) which has two main surfaces; a reflection layer (210) formed on the first main surface of the conductive substrate; a p-GaP window layer (220) which is formed on the reflection layer and has a thickness smaller than or equal to 2 μm; a p type confining layer (230) formed on the p-GaP window layer; a light-emitting layer (240) formed on the p type confining layer; an n type confining layer (250) formed on the light-emitting layer; an n-electrode (260) formed on the n type confining layer; and a p-electrode (270) formed on the second main surface of the conductive substrate. L'invention concerne une diode électroluminescente à luminosité ultra-élevée et un procédé de fabrication de celle-ci, qui réso