STACKED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Provided is a stacked semiconductor device that includes: a first complementary semiconductor device (100) in which a CMOS circuit and a wiring layer are formed on a semiconductor substrate (110); metal electrodes (141, 142) that are formed on the first complementary semiconductor device (100) toget...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IKEDA, KEIJI, TEZUKA, TSUTOMU, FURUSE, KIYOE, KAMIMUTA, YUUICHI
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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