METHOD OF MANUFACTURING AN ENCAPSULATED SEMICONDUCTOR DEVICE AND THE ENCAPSULATED SEMICONDUCTOR DEVICE

A method of manufacturing an encapsulated semiconductor device comprising a semiconductor device encapsulated on at least one major surface with a cured silicon body comprising a cured silicone adhesive composition to give the encapsulated semiconductor device; wherein the cured silicone adhesive co...

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Bibliographische Detailangaben
Hauptverfasser:	STEINBRECHER, KRISTEN, HYUN, DAESUP, JO, GUNN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL ORGANIC MACROMOLECULAR COMPOUNDS PAINTS POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS AS ADHESIVES
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Beschreibung
Zusammenfassung:	A method of manufacturing an encapsulated semiconductor device comprising a semiconductor device encapsulated on at least one major surface with a cured silicon body comprising a cured silicone adhesive composition to give the encapsulated semiconductor device; wherein the cured silicone adhesive composition has a storage modulus at 25° C. of from 0.1 GPa to 10 GPa and has a glass transition temperature of from 0° C. to 80° C. L'invention concerne un procédé de fabrication d'un dispositif semi-conducteur encapsulé comprenant un dispositif semi-conducteur encapsulé sur au moins une surface principale munie d'un corps en silicone durci comprenant une composition adhésive en silicone durci pour créer le dispositif semi-conducteur encapsulé ; la composition adhésive en silicone durci présente un module de conservation à 25 °C compris entre 0,1 GPa et 10 GPa et une température de transition vitreuse comprise entre 0 °C et 80 °C.