ZERO SHRINKAGE SMOOTH INTERFACE OXY-NITRIDE AND OXY-AMORPHOUS-SILICON STACKS FOR 3D MEMORY VERTICAL GATE APPLICATION

Methods are provided for depositing a stack of film layers for use in vertical gates for 3D memory devices, by depositing a sacrificial nitride film layer at a sacrificial film deposition temperature greater than about 550 °C; depositing an oxide film layer over the nitride film layer, at an oxide d...

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Hauptverfasser:	SHAIKH, SHAHID, PARK, HEUNG LAK, ROCHA-ALVAREZ, JUAN CARLOS, HAN, XINHAI, RAJAGOPALAN, NAGARAJAN, REILLY, PATRICK, NOWAK, THOMAS, KIM, BOK HOEN, XUAN, GUANGCHI, ZHOU, JIANHUA, LI, JIGANG
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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