CIRCUIT AND METHOD FOR GENERATING A REFERENCE LEVEL FOR A MAGNETIC RANDOM ACCESS MEMORY ELEMENT

A method of establishing a reference level includes providing first and second non-overlapping paths from a first node to a second node, providing first and second reference magnetic random access memory (MRAM) elements in the first path, providing third and fourth reference MRAM elements in the sec...

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Bibliographische Detailangaben

Hauptverfasser:	WU, WENQING, LI, SEAN, ZHU, XIAOCHUN, KIM, JUNG PILL, KANG, SEUNG H
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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