SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal gr...
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| creator | SAKAMOTO, MUNEAKI ARAHORI, TADAHISA KUSANO, EIJI OKAMOTO, KEN MIYASHITA, SACHIO SATO, AKISHIGE |
| description | This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained.
La présente invention se rapporte à une cible de pulvérisation qui utilise un corps fritté en oxyde de magnésium qui présente une pureté d'au moins 99,99 % ou une pureté d'au moins 99,995 %, en termes de % en masse, une densité relative d'au moins 98 % et une taille moyenne des grains cristallins inférieure ou égale à 8 mum. La cible de pulvérisation présente de préférence une taille moyenne des grains cristallins inférieure ou égale à 5 mum et, en outre, une taille moyenne des grains cristallins inférieure ou égale à 2 mum. A l'aide de la cible de pulvérisation, on peut obtenir un film de pulvérisation qui présente une excellente résistance d'isolement et une excellente homogénéité. |
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La présente invention se rapporte à une cible de pulvérisation qui utilise un corps fritté en oxyde de magnésium qui présente une pureté d'au moins 99,99 % ou une pureté d'au moins 99,995 %, en termes de % en masse, une densité relative d'au moins 98 % et une taille moyenne des grains cristallins inférieure ou égale à 8 mum. La cible de pulvérisation présente de préférence une taille moyenne des grains cristallins inférieure ou égale à 5 mum et, en outre, une taille moyenne des grains cristallins inférieure ou égale à 2 mum. A l'aide de la cible de pulvérisation, on peut obtenir un film de pulvérisation qui présente une excellente résistance d'isolement et une excellente homogénéité.</description><language>eng ; fre ; jpn</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130510&DB=EPODOC&CC=WO&NR=2013065564A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130510&DB=EPODOC&CC=WO&NR=2013065564A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAKAMOTO, MUNEAKI</creatorcontrib><creatorcontrib>ARAHORI, TADAHISA</creatorcontrib><creatorcontrib>KUSANO, EIJI</creatorcontrib><creatorcontrib>OKAMOTO, KEN</creatorcontrib><creatorcontrib>MIYASHITA, SACHIO</creatorcontrib><creatorcontrib>SATO, AKISHIGE</creatorcontrib><title>SPUTTERING TARGET AND METHOD FOR PRODUCING SAME</title><description>This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained.
La présente invention se rapporte à une cible de pulvérisation qui utilise un corps fritté en oxyde de magnésium qui présente une pureté d'au moins 99,99 % ou une pureté d'au moins 99,995 %, en termes de % en masse, une densité relative d'au moins 98 % et une taille moyenne des grains cristallins inférieure ou égale à 8 mum. La cible de pulvérisation présente de préférence une taille moyenne des grains cristallins inférieure ou égale à 5 mum et, en outre, une taille moyenne des grains cristallins inférieure ou égale à 2 mum. A l'aide de la cible de pulvérisation, on peut obtenir un film de pulvérisation qui présente une excellente résistance d'isolement et une excellente homogénéité.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAPDggNCXEN8vRzVwhxDHJ3DVFw9HNR8HUN8fB3UXDzD1IICPJ3CXUGyQc7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL4cH8jA0NjAzNTUzMTR0Nj4lQBAKVvJu4</recordid><startdate>20130510</startdate><enddate>20130510</enddate><creator>SAKAMOTO, MUNEAKI</creator><creator>ARAHORI, TADAHISA</creator><creator>KUSANO, EIJI</creator><creator>OKAMOTO, KEN</creator><creator>MIYASHITA, SACHIO</creator><creator>SATO, AKISHIGE</creator><scope>EVB</scope></search><sort><creationdate>20130510</creationdate><title>SPUTTERING TARGET AND METHOD FOR PRODUCING SAME</title><author>SAKAMOTO, MUNEAKI ; ARAHORI, TADAHISA ; KUSANO, EIJI ; OKAMOTO, KEN ; MIYASHITA, SACHIO ; SATO, AKISHIGE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2013065564A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2013</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>SAKAMOTO, MUNEAKI</creatorcontrib><creatorcontrib>ARAHORI, TADAHISA</creatorcontrib><creatorcontrib>KUSANO, EIJI</creatorcontrib><creatorcontrib>OKAMOTO, KEN</creatorcontrib><creatorcontrib>MIYASHITA, SACHIO</creatorcontrib><creatorcontrib>SATO, AKISHIGE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAKAMOTO, MUNEAKI</au><au>ARAHORI, TADAHISA</au><au>KUSANO, EIJI</au><au>OKAMOTO, KEN</au><au>MIYASHITA, SACHIO</au><au>SATO, AKISHIGE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPUTTERING TARGET AND METHOD FOR PRODUCING SAME</title><date>2013-05-10</date><risdate>2013</risdate><abstract>This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained.
La présente invention se rapporte à une cible de pulvérisation qui utilise un corps fritté en oxyde de magnésium qui présente une pureté d'au moins 99,99 % ou une pureté d'au moins 99,995 %, en termes de % en masse, une densité relative d'au moins 98 % et une taille moyenne des grains cristallins inférieure ou égale à 8 mum. La cible de pulvérisation présente de préférence une taille moyenne des grains cristallins inférieure ou égale à 5 mum et, en outre, une taille moyenne des grains cristallins inférieure ou égale à 2 mum. A l'aide de la cible de pulvérisation, on peut obtenir un film de pulvérisation qui présente une excellente résistance d'isolement et une excellente homogénéité.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
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