METHOD FOR ETCHING EUV REFLECTIVE MULTI-MATERIAL LAYERS UTILIZED TO FORM A PHOTOMASK

A method and apparatus for etching photomasks are provided herein. In one embodiment, a forming gas use utilized to remove a mask layer utilized film stack having a multi-material layer having at least two different materials. In another embodiment, a method of etching a multi-material layer dispose...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GRIMBERGEN, MICHAEL, SABHARWAL, AMITABH, CHANDRACHOOD, MADHAVI, KUMAR, AJAY, YU, KEVEN KAISHENG
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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