RF MEMS COMPONENT COMPRISING FERROELECTRIC MATERIAL

The invention relates to an RF MEMS component with a fast activation time and intended for applications in the frequency range below about 10 GHz, comprising an insulating substrate (S) having, on the surface of said substrate, at least one RF line (LRF) located between two conductive areas (M1, M2), said RF line being at least locally covered with a layer of dielectric material (MD), said component furthermore comprising a membrane (m) located above said RF line and making contact with the two conductive areas, characterized in that said dielectric material is a ferroelectric material having a dielectric constant higher than about 600 and a remnant polarization of less than about 5 µC.cm-2. The invention also relates to a process for fabricating said component. L'invention concerne un composant MEMS-RF temps d'activation rapide et destin des applications dans des domaines de fréquences inférieurs environ 10 GHz comprenant un substrat isolant (S) comportant la surface dudit substrat au moins une ligne RF (LRF) situe entre deux surfaces conductrices (M1, M2), ladite ligne RF tant au moins localement recouverte dune couche de matériau diélectrique (MD), ledit composant comprenant en outre une membrane (m) situe au dessus de ladite ligne RF et en contact avec les deux surfaces conductrices caractérisé en ce que ledit matériau diélectrique est un matériau ferroélectrique de constante diélectrique supérieure environ 600 et de polarisation rémanente inférieure environ 5 µC.cm-2 L'invention a aussi pour objet un procédé de fabrication dudit composant.