METHOD FOR FORMING A SUBSTRATE, AND SUBSTRATE FORMED THEREBY

The present invention relates to a method for forming a substrate. The method for forming the substrate comprises the steps of: forming a deposit layer consisting of different materials on a single-crystal substrate; depositing an aluminum (Al) film onto the deposit layer; oxidizing and single-cryst...

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Bibliographische Detailangaben
1. Verfasser:	KIM, KIUL
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a method for forming a substrate. The method for forming the substrate comprises the steps of: forming a deposit layer consisting of different materials on a single-crystal substrate; depositing an aluminum (Al) film onto the deposit layer; oxidizing and single-crystallizing the aluminum film; disintegrating the deposit layer so as to separate the single-crystallized aluminum oxide (Al2O3) from the deposit layer; and attaching the separated single-crystal aluminum oxide (Al2O3) to a supporting substrate. La présente invention concerne un procédé de formation d'un substrat. Le procédé de formation de substrat comprend les étapes suivantes : formation d'une couche de dépôt constituée de différents matériaux sur un substrat monocristallin ; dépôt d'un film d'aluminium (Al) sur la couche de dépôt ; oxydation et monocristallisation du film d'aluminium ; désintégration de la couche de dépôt afin de séparer l'oxyde d'aluminium (Al2O3) monocristallisé de la couche de dépôt ; et attachement de l'oxyde d'aluminium (Al2O3) moncristallin séparé à un substrat de support.