THIN-FILM TRANSISTOR, METHOD FOR PRODUCING SAME, AND DISPLAY ELEMENT
A semiconductor layer (40) is formed from an oxide semiconductor in which the width of a channel region (40a) is smaller than the widths of source and drain electrodes (60a, 60b) and the area of the side surface is enlarged. The semiconductor layer (40) is sandwiched between a gate insulating film (...
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| creator | KITAKADO, HIDEHITO TOMIYASU, KAZUHIDE TOMIDA, MASAHIRO KATOH, SUMIO |
| description | A semiconductor layer (40) is formed from an oxide semiconductor in which the width of a channel region (40a) is smaller than the widths of source and drain electrodes (60a, 60b) and the area of the side surface is enlarged. The semiconductor layer (40) is sandwiched between a gate insulating film (30) and a passivation film (90) and is subjected to annealing in an atmosphere containing oxygen. As a consequence, external oxygen and the oxygen contained in the gate insulating film (30) and the passivation film (90) are supplied to the channel region (40a), the areas of low-resistance regions (40b) become small, and the region sandwiched by the two low-resistance regions (40b) becomes a high-resistance region (40c). Meanwhile, the contact resistance between the semiconductor layer (40) and the source and drain electrodes (60a, 60b) are kept low. As a result, the on and off ratio becomes large and suitable transistor properties are obtained.
Une couche semi-conductrice (40) est formée à partir d'un semi-conducteur oxyde dans lequel la largeur d'une zone de canal (40a) est inférieure aux largeurs d'électrodes de source et de drain (60a, 60b) et l'aire de la surface latérale est élargie. La couche semi-conductrice (40) est intercalée entre une pellicule d'isolation de gâchette (30) et une pellicule de passivation (90) et est soumise à un recuit dans une atmosphère contenant de l'oxygène. En conséquence, l'oxygène externe et l'oxygène contenu dans la pellicule d'isolation de gâchette (30) et la pellicule de passivation (90) sont fournis à la zone de canal (40a), les aires de zones à faible résistance (40b) deviennent petites, et la zone intercalée entre les deux zones à faible résistance (40b) devient une zone à résistance élevée (40c). En même temps, la résistance de contact entre la couche semi-conductrice (40) et les électrodes de source et de drain (60a, 60b) est maintenue basse. Ainsi, le ratio d'activation et de désactivation devient large et des propriétés de transistor convenables sont obtenues. |
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Une couche semi-conductrice (40) est formée à partir d'un semi-conducteur oxyde dans lequel la largeur d'une zone de canal (40a) est inférieure aux largeurs d'électrodes de source et de drain (60a, 60b) et l'aire de la surface latérale est élargie. La couche semi-conductrice (40) est intercalée entre une pellicule d'isolation de gâchette (30) et une pellicule de passivation (90) et est soumise à un recuit dans une atmosphère contenant de l'oxygène. En conséquence, l'oxygène externe et l'oxygène contenu dans la pellicule d'isolation de gâchette (30) et la pellicule de passivation (90) sont fournis à la zone de canal (40a), les aires de zones à faible résistance (40b) deviennent petites, et la zone intercalée entre les deux zones à faible résistance (40b) devient une zone à résistance élevée (40c). En même temps, la résistance de contact entre la couche semi-conductrice (40) et les électrodes de source et de drain (60a, 60b) est maintenue basse. Ainsi, le ratio d'activation et de désactivation devient large et des propriétés de transistor convenables sont obtenues.</description><language>eng ; fre ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121213&DB=EPODOC&CC=WO&NR=2012169397A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121213&DB=EPODOC&CC=WO&NR=2012169397A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KITAKADO, HIDEHITO</creatorcontrib><creatorcontrib>TOMIYASU, KAZUHIDE</creatorcontrib><creatorcontrib>TOMIDA, MASAHIRO</creatorcontrib><creatorcontrib>KATOH, SUMIO</creatorcontrib><title>THIN-FILM TRANSISTOR, METHOD FOR PRODUCING SAME, AND DISPLAY ELEMENT</title><description>A semiconductor layer (40) is formed from an oxide semiconductor in which the width of a channel region (40a) is smaller than the widths of source and drain electrodes (60a, 60b) and the area of the side surface is enlarged. The semiconductor layer (40) is sandwiched between a gate insulating film (30) and a passivation film (90) and is subjected to annealing in an atmosphere containing oxygen. As a consequence, external oxygen and the oxygen contained in the gate insulating film (30) and the passivation film (90) are supplied to the channel region (40a), the areas of low-resistance regions (40b) become small, and the region sandwiched by the two low-resistance regions (40b) becomes a high-resistance region (40c). Meanwhile, the contact resistance between the semiconductor layer (40) and the source and drain electrodes (60a, 60b) are kept low. As a result, the on and off ratio becomes large and suitable transistor properties are obtained.
Une couche semi-conductrice (40) est formée à partir d'un semi-conducteur oxyde dans lequel la largeur d'une zone de canal (40a) est inférieure aux largeurs d'électrodes de source et de drain (60a, 60b) et l'aire de la surface latérale est élargie. La couche semi-conductrice (40) est intercalée entre une pellicule d'isolation de gâchette (30) et une pellicule de passivation (90) et est soumise à un recuit dans une atmosphère contenant de l'oxygène. En conséquence, l'oxygène externe et l'oxygène contenu dans la pellicule d'isolation de gâchette (30) et la pellicule de passivation (90) sont fournis à la zone de canal (40a), les aires de zones à faible résistance (40b) deviennent petites, et la zone intercalée entre les deux zones à faible résistance (40b) devient une zone à résistance élevée (40c). En même temps, la résistance de contact entre la couche semi-conductrice (40) et les électrodes de source et de drain (60a, 60b) est maintenue basse. Ainsi, le ratio d'activation et de désactivation devient large et des propriétés de transistor convenables sont obtenues.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAJ8fD003Xz9PFVCAly9Av2DA7xD9JR8HUN8fB3UXDzD1IICPJ3CXX29HNXCHb0ddVRcPRzUXDxDA7wcYxUcPVx9XX1C-FhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGhkaGZpbGluaOhsbEqQIA9hcskA</recordid><startdate>20121213</startdate><enddate>20121213</enddate><creator>KITAKADO, HIDEHITO</creator><creator>TOMIYASU, KAZUHIDE</creator><creator>TOMIDA, MASAHIRO</creator><creator>KATOH, SUMIO</creator><scope>EVB</scope></search><sort><creationdate>20121213</creationdate><title>THIN-FILM TRANSISTOR, METHOD FOR PRODUCING SAME, AND DISPLAY ELEMENT</title><author>KITAKADO, HIDEHITO ; TOMIYASU, KAZUHIDE ; TOMIDA, MASAHIRO ; KATOH, SUMIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2012169397A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>KITAKADO, HIDEHITO</creatorcontrib><creatorcontrib>TOMIYASU, KAZUHIDE</creatorcontrib><creatorcontrib>TOMIDA, MASAHIRO</creatorcontrib><creatorcontrib>KATOH, SUMIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KITAKADO, HIDEHITO</au><au>TOMIYASU, KAZUHIDE</au><au>TOMIDA, MASAHIRO</au><au>KATOH, SUMIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN-FILM TRANSISTOR, METHOD FOR PRODUCING SAME, AND DISPLAY ELEMENT</title><date>2012-12-13</date><risdate>2012</risdate><abstract>A semiconductor layer (40) is formed from an oxide semiconductor in which the width of a channel region (40a) is smaller than the widths of source and drain electrodes (60a, 60b) and the area of the side surface is enlarged. The semiconductor layer (40) is sandwiched between a gate insulating film (30) and a passivation film (90) and is subjected to annealing in an atmosphere containing oxygen. As a consequence, external oxygen and the oxygen contained in the gate insulating film (30) and the passivation film (90) are supplied to the channel region (40a), the areas of low-resistance regions (40b) become small, and the region sandwiched by the two low-resistance regions (40b) becomes a high-resistance region (40c). Meanwhile, the contact resistance between the semiconductor layer (40) and the source and drain electrodes (60a, 60b) are kept low. As a result, the on and off ratio becomes large and suitable transistor properties are obtained.
Une couche semi-conductrice (40) est formée à partir d'un semi-conducteur oxyde dans lequel la largeur d'une zone de canal (40a) est inférieure aux largeurs d'électrodes de source et de drain (60a, 60b) et l'aire de la surface latérale est élargie. La couche semi-conductrice (40) est intercalée entre une pellicule d'isolation de gâchette (30) et une pellicule de passivation (90) et est soumise à un recuit dans une atmosphère contenant de l'oxygène. En conséquence, l'oxygène externe et l'oxygène contenu dans la pellicule d'isolation de gâchette (30) et la pellicule de passivation (90) sont fournis à la zone de canal (40a), les aires de zones à faible résistance (40b) deviennent petites, et la zone intercalée entre les deux zones à faible résistance (40b) devient une zone à résistance élevée (40c). En même temps, la résistance de contact entre la couche semi-conductrice (40) et les électrodes de source et de drain (60a, 60b) est maintenue basse. Ainsi, le ratio d'activation et de désactivation devient large et des propriétés de transistor convenables sont obtenues.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | THIN-FILM TRANSISTOR, METHOD FOR PRODUCING SAME, AND DISPLAY ELEMENT |
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