THIN FILM FORMATION METHOD, THIN FILM FORMATION DEVICE, PRODUCTION METHOD FOR DISPLAY PANEL, PRODUCTION METHOD FOR DISPLAY DEVICE, AND PRODUCTION METHOD FOR LIGHT-EMITTING DEVICE

The purpose of the present invention is to provide a thin film formation method whereby a thin film comprising an altered metal or alloy can be formed directly on a subject of thin film formation, without altering the surface of the subject of thin film formation. The thin film formation method has:...

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Bibliographische Detailangaben
Hauptverfasser:	ABE, YUUKI, MIZUSAKI, NAOKO, NENDAI, KENICHI
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The purpose of the present invention is to provide a thin film formation method whereby a thin film comprising an altered metal or alloy can be formed directly on a subject of thin film formation, without altering the surface of the subject of thin film formation. The thin film formation method has: a surface alteration step in which at least the surface of a target member (30) is altered, forming on the surface of the target member (30) a surface layer (30a) containing an altered metal or alloy; a positioning step in which the subject of thin film formation, together with the target member (30) subsequent to formation of the surface layer (30a) thereon, are positioned within a vacuum container (21); and an altered thin film formation step in which, under conditions in which no active gases are present inside the vacuum container (21), the surface layer (30a) of the target member (30) is sputtered, depositing the altered material contained in the surface layer (30a) onto the surface of the subject of thin film formation, and forming an altered metal or alloy thin film (4a). L'invention concerne un procédé de formation de film mince, dans lequel un film mince comprenant un métal ou un alliage altéré peut être formé directement sur un objet de formation de film mince, sans altération de la surface de l'objet de formation de film mince. Ce procédé de formation de film mince comporte les étapes consistant à: altérer au moins la surface d'un élément voulu (30); former sur la surface de l'élément voulu (30) une couche de surface (30a) contenant un métal ou un alliage altéré; positionner l'objet de formation de film mince avec l'élément voulu (30), après avoir formé la couche de surface (30a) sur celui-ci, à l'intérieur d'un contenant sous vide (21); et former un film mince altéré, dans des conditions dans lesquelles aucun gaz actif n'est présent à l'intérieur du contenant sous vide (21), en pulvérisant la couche de surface (30a) de l'élément voulu (30); déposer la matière altérée contenue dans la couche de surface (30a) sur la surface de l'objet de formation du film mince; et former un film mince (4a) de métal ou d'alliage altéré.