HIGH PRESSURE BEVEL ETCH PROCESS

A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FANG, TONG, KIM, YUNSANG, S, FISCHER, ANDREAS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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