GRAPHITE CRUCIBLE FOR SILICON CRYSTAL PRODUCTION

A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A protective coating is provided on the bottom wall interio...

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Bibliographische Detailangaben
Hauptverfasser:	FRANCIS, ANDREW, JUSTIN, ELLOITT, RYAN, CHRISTOPHER
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY CRYSTAL GROWTH METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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