METHOD FOR FORMING SEMICONDUCTOR THIN FILM, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE, AND THIN FILM SUBSTRATE

Provided is a method for forming a semiconductor thin film whereby a crystalline silicon film of high crystallinity can be formed at a low temperature. This method for forming a semiconductor thin film includes a first step in which an amorphous silicon film (precursor film (2F)) having an intensity...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OOTAKA, SEI, KAWASHIMA, TAKAHIRO, NISHITANI, HIKARU
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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