METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS
Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed. L'invention porte sur des procédés de production de structures de type silicium sur isol...
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| creator | FLANNERY, LAWRENCE P GRABBE, ALEXIS |
| description | Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
L'invention porte sur des procédés de production de structures de type silicium sur isolant présentant une teneur réduite en métal dans leur couche dispositif. L'invention porte également sur des structures de type silicium sur isolant ayant une teneur réduite en métal. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2012106210A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2012106210A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2012106210A33</originalsourceid><addsrcrecordid>eNqNjbEKwjAYhLs4iPoOB85CW8E9Jn9NoCaS_FE6lSJxEi3Uwce3SCcnh-Pgu-Nunr2PxNqpgMp5eFJRGnsAa8IYiBrSWSbLMPYLFZ2NJNSiIQ9XITiDwD5Kjp4ChFW_6OTdOEoK-wYhSo3pcJnNbt19SKvJF9m6IpZ6k_pnm4a-u6ZHerUXV-ZFWeS7UWK7_a_1AV-3Oq8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS</title><source>esp@cenet</source><creator>FLANNERY, LAWRENCE P ; GRABBE, ALEXIS</creator><creatorcontrib>FLANNERY, LAWRENCE P ; GRABBE, ALEXIS</creatorcontrib><description>Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
L'invention porte sur des procédés de production de structures de type silicium sur isolant présentant une teneur réduite en métal dans leur couche dispositif. L'invention porte également sur des structures de type silicium sur isolant ayant une teneur réduite en métal.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121101&DB=EPODOC&CC=WO&NR=2012106210A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121101&DB=EPODOC&CC=WO&NR=2012106210A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FLANNERY, LAWRENCE P</creatorcontrib><creatorcontrib>GRABBE, ALEXIS</creatorcontrib><title>METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS</title><description>Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
L'invention porte sur des procédés de production de structures de type silicium sur isolant présentant une teneur réduite en métal dans leur couche dispositif. L'invention porte également sur des structures de type silicium sur isolant ayant une teneur réduite en métal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjbEKwjAYhLs4iPoOB85CW8E9Jn9NoCaS_FE6lSJxEi3Uwce3SCcnh-Pgu-Nunr2PxNqpgMp5eFJRGnsAa8IYiBrSWSbLMPYLFZ2NJNSiIQ9XITiDwD5Kjp4ChFW_6OTdOEoK-wYhSo3pcJnNbt19SKvJF9m6IpZ6k_pnm4a-u6ZHerUXV-ZFWeS7UWK7_a_1AV-3Oq8</recordid><startdate>20121101</startdate><enddate>20121101</enddate><creator>FLANNERY, LAWRENCE P</creator><creator>GRABBE, ALEXIS</creator><scope>EVB</scope></search><sort><creationdate>20121101</creationdate><title>METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS</title><author>FLANNERY, LAWRENCE P ; GRABBE, ALEXIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2012106210A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FLANNERY, LAWRENCE P</creatorcontrib><creatorcontrib>GRABBE, ALEXIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FLANNERY, LAWRENCE P</au><au>GRABBE, ALEXIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS</title><date>2012-11-01</date><risdate>2012</risdate><abstract>Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
L'invention porte sur des procédés de production de structures de type silicium sur isolant présentant une teneur réduite en métal dans leur couche dispositif. L'invention porte également sur des structures de type silicium sur isolant ayant une teneur réduite en métal.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS |
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