METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS

METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS

Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed. L'invention porte sur des procédés de production de structures de type silicium sur isol...

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Bibliographische Detailangaben
Hauptverfasser: FLANNERY, LAWRENCE P, GRABBE, ALEXIS
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed. L'invention porte sur des procédés de production de structures de type silicium sur isolant présentant une teneur réduite en métal dans leur couche dispositif. L'invention porte également sur des structures de type silicium sur isolant ayant une teneur réduite en métal.