STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL GATE DEVICES

A substrate is provided. An STI trench is formed in the substrate. A fill material is formed in the STI trench and then planarized. The substrate is exposed to an oxidizing ambient, growing a liner at a bottom and sidewalls of the STI trench. The liner reduces the Vt-W effect in high-k metal gate de...

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Hauptverfasser: AQUILINO, MICHAEL, V, CONTI, RICHARD, A, JAEGER, DANIEL, J, NARAYANAN, VIJAY, BAIOCCO, CHRISTOPHER, V
Format: Patent
Sprache:eng ; fre
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