A REDUNDANCY MEMORY STORAGE SYSTEM AND A METHOD FOR CONTROLLING A REDUNDANCY MEMORY STORAGE SYSTEM

A REDUNDANCY MEMORY STORAGE SYSTEM AND A METHOD FOR CONTROLLING A REDUNDANCY MEMORY STORAGE SYSTEM

A memory system is provided, including a first memory ( 110 ) comprising a plurality of bitcells configured to store data, and a second memory ( 120 ), configured to store an index of the data stored at a corresponding location in the first memory and further configured to store repair information,...

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Hauptverfasser: WEISS, DONALD R, WUU, JOHN J
Format: Patent
Sprache:eng ; fre
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator WEISS, DONALD R
WUU, JOHN J
description A memory system is provided, including a first memory ( 110 ) comprising a plurality of bitcells configured to store data, and a second memory ( 120 ), configured to store an index of the data stored at a corresponding location in the first memory and further configured to store repair information, wherein th repair information indicates a bitcell error at the corresponding location in the first memory. L'invention concerne un système de mémoire, comprenant une première mémoire (110) comportant une pluralité de cellules binaires configurées pour stocker des données, ainsi qu'une deuxième mémoire (120), configurée pour stocker un index des données stockées à un emplacement correspondant dans la première mémoire et configurée en outre pour stocker des informations de réparation, lesdites informations de réparation indiquant une erreur de cellule binaire à l'emplacement correspondant dans la première mémoire.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2012094214A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2012094214A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2012094214A13</originalsourceid><addsrcrecordid>eNrjZEhyVAhydQn1c3H0c45U8HX19Q-KVAgO8Q9ydHdVCI4MDnH1VXD0c1FwBMqFePi7KLj5Byk4-_uFBPn7-Hj6uSsQ1s_DwJqWmFOcyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-LD_Y0MDI0MLE2MDE0cDY2JUwUAubQ09A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>A REDUNDANCY MEMORY STORAGE SYSTEM AND A METHOD FOR CONTROLLING A REDUNDANCY MEMORY STORAGE SYSTEM</title><source>esp@cenet</source><creator>WEISS, DONALD R ; WUU, JOHN J</creator><creatorcontrib>WEISS, DONALD R ; WUU, JOHN J</creatorcontrib><description>A memory system is provided, including a first memory ( 110 ) comprising a plurality of bitcells configured to store data, and a second memory ( 120 ), configured to store an index of the data stored at a corresponding location in the first memory and further configured to store repair information, wherein th repair information indicates a bitcell error at the corresponding location in the first memory. L'invention concerne un système de mémoire, comprenant une première mémoire (110) comportant une pluralité de cellules binaires configurées pour stocker des données, ainsi qu'une deuxième mémoire (120), configurée pour stocker un index des données stockées à un emplacement correspondant dans la première mémoire et configurée en outre pour stocker des informations de réparation, lesdites informations de réparation indiquant une erreur de cellule binaire à l'emplacement correspondant dans la première mémoire.</description><language>eng ; fre</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120712&amp;DB=EPODOC&amp;CC=WO&amp;NR=2012094214A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120712&amp;DB=EPODOC&amp;CC=WO&amp;NR=2012094214A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WEISS, DONALD R</creatorcontrib><creatorcontrib>WUU, JOHN J</creatorcontrib><title>A REDUNDANCY MEMORY STORAGE SYSTEM AND A METHOD FOR CONTROLLING A REDUNDANCY MEMORY STORAGE SYSTEM</title><description>A memory system is provided, including a first memory ( 110 ) comprising a plurality of bitcells configured to store data, and a second memory ( 120 ), configured to store an index of the data stored at a corresponding location in the first memory and further configured to store repair information, wherein th repair information indicates a bitcell error at the corresponding location in the first memory. L'invention concerne un système de mémoire, comprenant une première mémoire (110) comportant une pluralité de cellules binaires configurées pour stocker des données, ainsi qu'une deuxième mémoire (120), configurée pour stocker un index des données stockées à un emplacement correspondant dans la première mémoire et configurée en outre pour stocker des informations de réparation, lesdites informations de réparation indiquant une erreur de cellule binaire à l'emplacement correspondant dans la première mémoire.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEhyVAhydQn1c3H0c45U8HX19Q-KVAgO8Q9ydHdVCI4MDnH1VXD0c1FwBMqFePi7KLj5Byk4-_uFBPn7-Hj6uSsQ1s_DwJqWmFOcyguluRmU3VxDnD10Uwvy41OLCxKTU_NSS-LD_Y0MDI0MLE2MDE0cDY2JUwUAubQ09A</recordid><startdate>20120712</startdate><enddate>20120712</enddate><creator>WEISS, DONALD R</creator><creator>WUU, JOHN J</creator><scope>EVB</scope></search><sort><creationdate>20120712</creationdate><title>A REDUNDANCY MEMORY STORAGE SYSTEM AND A METHOD FOR CONTROLLING A REDUNDANCY MEMORY STORAGE SYSTEM</title><author>WEISS, DONALD R ; WUU, JOHN J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2012094214A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2012</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>WEISS, DONALD R</creatorcontrib><creatorcontrib>WUU, JOHN J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WEISS, DONALD R</au><au>WUU, JOHN J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A REDUNDANCY MEMORY STORAGE SYSTEM AND A METHOD FOR CONTROLLING A REDUNDANCY MEMORY STORAGE SYSTEM</title><date>2012-07-12</date><risdate>2012</risdate><abstract>A memory system is provided, including a first memory ( 110 ) comprising a plurality of bitcells configured to store data, and a second memory ( 120 ), configured to store an index of the data stored at a corresponding location in the first memory and further configured to store repair information, wherein th repair information indicates a bitcell error at the corresponding location in the first memory. L'invention concerne un système de mémoire, comprenant une première mémoire (110) comportant une pluralité de cellules binaires configurées pour stocker des données, ainsi qu'une deuxième mémoire (120), configurée pour stocker un index des données stockées à un emplacement correspondant dans la première mémoire et configurée en outre pour stocker des informations de réparation, lesdites informations de réparation indiquant une erreur de cellule binaire à l'emplacement correspondant dans la première mémoire.</abstract><oa>free_for_read</oa></addata></record>
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title A REDUNDANCY MEMORY STORAGE SYSTEM AND A METHOD FOR CONTROLLING A REDUNDANCY MEMORY STORAGE SYSTEM
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