THIN-FILM MAGNETORESISTANCE SENSING ELEMENT, COMBINATION THEREOF, AND ELECTRONIC DEVICE COUPLED TO THE COMBINATION

Provided is a thin-film magnetoresistance sensing element for detecting a magnetic field component perpendicular to a deposited substrate plane thereof. The sensing element comprises a free layer (30), a reference layer (10; 11), and an isolation layer (20; 21) between the free layer and the referen...

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Bibliographische Detailangaben
Hauptverfasser: XUE, S. SHENG, DEAK, JAMES GEZA
Format: Patent
Sprache:chi ; eng ; fre
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Beschreibung
Zusammenfassung:Provided is a thin-film magnetoresistance sensing element for detecting a magnetic field component perpendicular to a deposited substrate plane thereof. The sensing element comprises a free layer (30), a reference layer (10; 11), and an isolation layer (20; 21) between the free layer and the reference layer. The easy magnetization axis, which is inherent to the material of the free layer (30), is arranged to be perpendicular to the deposited substrate plane thereof. The magnetization direction of the reference layer (10; 11) is limited to a direction parallel to the substrate plane, the reference layer consisting of a ferromagnetic layer coupled magnetically to an antiferromagnetic layer, or consisting of a ferromagnetic layer having a higher coercive force than that of the free layer. The isolation layer (20; 21) is made of an insulating material or a conductive material. Also provided are a combination of multiple aforementioned sensing elements and an electronic device coupled to the combination of the abo