METHOD FOR MANUFACTURING A LAYERED STRUCTURE FOR DOUBLE-PLATE CAPACITORS

The method comprises the following steps: forming regularly arranged seed-crystal projections on the surface of a silicon substrate; growing uniform columnar nanoelements on the seed-crystal projections using the GLAD method; and applying layers of a dielectric material and an electrically conductin...

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Bibliographische Detailangaben
Hauptverfasser:	PEISAKHOV, ALEKSANDR VIKTOROVICH, BARGAN, PETR ALEKSANDROVICH, BARGAN, VASILY ALEKSANDROVICH, KASHIN, DMITRY EVGENEVICH, KHALYAVIN, ALEKSEY BORISOVICH, MALYGIN, ANATOLY ALEKSEEVICH
Format:	Patent
Sprache:	eng ; fre ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The method comprises the following steps: forming regularly arranged seed-crystal projections on the surface of a silicon substrate; growing uniform columnar nanoelements on the seed-crystal projections using the GLAD method; and applying layers of a dielectric material and an electrically conducting material to the surface of the columnar nanoelements and to those portions of the surface which are not occupied by the above-mentioned nanoelements using the ALD or PEALD method. Le procédé comprend les étapes suivantes : formation des saillies d'ensemencement disposées régulièrement sur la surface d'un substrat de silicium; croissance uniforme sur les saillies d'ensemencement nano-éléments monodimensionnels aciculaires par procédé GLAD; et application de couches d'un matériau diélectrique et d'un matériau électriquement conducteur à la surface des nano-éléments aciculaires et à celle des parties de la surface nonpas occupées par les éléments nanométriques mentionnés ci-dessus à au moyen d'un procédé ALD ou PEALD.