ETCHING OF OXIDE MATERIALS

Oxide film deposits are removed from a film-forming apparatus. In the disclosed methods, a fluorine-containing gas, preferably plasma treated NF3, reacts with the oxide film deposits. The vapors of an organic compound, preferably t-butyl alcohol or acetylacetonate, react with the fluorinated oxide f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TOGE, TERUKUNI, BLASCO, NICOLAS, TERAMOTO, TAKASHI, SONOBE, JUN, CHEVREL, HENRI
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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