PROCESS FOR THE PRODUCTION OF A COMPOUND SEMICONDUCTOR LAYER

Process for the production of a I-III-VI-compo.und semiconductor layer (80), in which a substrate (50) is provided (10, 12) with a coating (63) which has a metallic precursor layer (57), the coating (63) is heated and kept for the duration of a process time at temperatures of at least 350 °C (16) an...

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Bibliographische Detailangaben
Hauptverfasser:	EISENMANN, LORENZ, SCHMID, DIETER, KOETSCHAU, IMMO, KAMPMANN, ANDREAS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	Process for the production of a I-III-VI-compo.und semiconductor layer (80), in which a substrate (50) is provided (10, 12) with a coating (63) which has a metallic precursor layer (57), the coating (63) is heated and kept for the duration of a process time at temperatures of at least 350 °C (16) and the metallic precursor layer (57) is thereby converted (16), in the presence of a chalcogen (58; 72), into the compound semiconductor layer (80) while areal contact is provided (14; 24) between a preponderant proportion (15a) of a free surface (15a, 15b; 25) of the coating (63) and a cover (60; 70) during at least part of the process time. La présente invention concerne un procédé destiné à la production d'une couche de semi-conducteur composite I-III-VI (80), dans lequel un substrat (50) est muni (10, 12) d'un revêtement (63) qui présente une couche de précurseur métallique (57), le revêtement (63) étant chauffé et conservé pendant la durée d'un temps de traitement à des températures d'au moins 350 °C (16) et la couche de précurseur métallique (57) est ainsi convertie (16), en présence d'un chalcogène (58; 72), en couche de semi-conducteur composite (80) lorsque s'effectue un contact surfacique (14; 24) entre une proportion prépondérante (15a) d'une surface libre (15a, 15b; 25) du revêtement (63) et un couvercle (60; 70) pendant au moins une partie du temps de traitement.