PROCESS AND STRUCTURE FOR HIGH TEMPERATURE SELECTIVE FUSION BONDING

A method to prevent movable structures within a MEMS device, and more specifically, in recesses having one or more dimension in the micrometer range or smaller (i.e., smaller than about 10 microns) from being inadvertently bonded to non-moving structures during a bonding process. The method includes...

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Bibliographische Detailangaben
1. Verfasser:	ARUNASALAM, PARTHIBAN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method to prevent movable structures within a MEMS device, and more specifically, in recesses having one or more dimension in the micrometer range or smaller (i.e., smaller than about 10 microns) from being inadvertently bonded to non-moving structures during a bonding process. The method includes surface preparation of silicon both structurally and chemically to aid in preventing moving structures from bonding to adjacent surfaces during bonding, including during high force, high temperature fusion bonding. L'invention concerne un procédé destiné à empêcher une liaison par inadvertance de structures mobiles dans des dispositifs MEMS, et plus particulièrement, dans des retraits possédant une ou plusieurs dimensions de l'ordre du micromètre ou moins (par ex., moins de 10 microns) à des structures non mobiles durant un processus de liaison. Le procédé comprend une préparation de surface en silicium à la fois sur le plan structurel et chimique afin d'éviter que des structures mobiles ne se lient à des surfaces adjacentes durant la liaison, y compris durant une liaison par fusion haute température, de force élevée.