PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF

A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer l...

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Hauptverfasser: VLCEK, JOHANNES, JULIANO, DANIEL, R
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JULIANO, DANIEL, R
description A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2011084926A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2011084926A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2011084926A33</originalsourceid><addsrcrecordid>eNqNjMsKwjAQRbtxIeo_DLgW-hDRZUwmJphmSjpaEKQUiSvRQv1_lOIHuLpwzuFOk2tliOlMjoWVUArGYIWrobFsQJLnQM6JvUO4WC9BeAU1KXsqR4meR1QiG1JA-vtwtP4AbDAg6XkyuXePIS5-O0uWGlmaVexfbRz67haf8d02lKdZlm7Xu3wjiuK_6gPLQTOV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF</title><source>esp@cenet</source><creator>VLCEK, JOHANNES ; JULIANO, DANIEL, R</creator><creatorcontrib>VLCEK, JOHANNES ; JULIANO, DANIEL, R</creatorcontrib><description>A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20111103&amp;DB=EPODOC&amp;CC=WO&amp;NR=2011084926A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20111103&amp;DB=EPODOC&amp;CC=WO&amp;NR=2011084926A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VLCEK, JOHANNES</creatorcontrib><creatorcontrib>JULIANO, DANIEL, R</creatorcontrib><title>PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF</title><description>A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMsKwjAQRbtxIeo_DLgW-hDRZUwmJphmSjpaEKQUiSvRQv1_lOIHuLpwzuFOk2tliOlMjoWVUArGYIWrobFsQJLnQM6JvUO4WC9BeAU1KXsqR4meR1QiG1JA-vtwtP4AbDAg6XkyuXePIS5-O0uWGlmaVexfbRz67haf8d02lKdZlm7Xu3wjiuK_6gPLQTOV</recordid><startdate>20111103</startdate><enddate>20111103</enddate><creator>VLCEK, JOHANNES</creator><creator>JULIANO, DANIEL, R</creator><scope>EVB</scope></search><sort><creationdate>20111103</creationdate><title>PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF</title><author>VLCEK, JOHANNES ; JULIANO, DANIEL, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2011084926A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><toplevel>online_resources</toplevel><creatorcontrib>VLCEK, JOHANNES</creatorcontrib><creatorcontrib>JULIANO, DANIEL, R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VLCEK, JOHANNES</au><au>JULIANO, DANIEL, R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF</title><date>2011-11-03</date><risdate>2011</risdate><abstract>A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
title PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T20%3A02%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=VLCEK,%20JOHANNES&rft.date=2011-11-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2011084926A3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true