PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF
A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer l...
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creator | VLCEK, JOHANNES JULIANO, DANIEL, R |
description | A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer.
La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n. |
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La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111103&DB=EPODOC&CC=WO&NR=2011084926A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111103&DB=EPODOC&CC=WO&NR=2011084926A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VLCEK, JOHANNES</creatorcontrib><creatorcontrib>JULIANO, DANIEL, R</creatorcontrib><title>PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF</title><description>A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer.
La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMsKwjAQRbtxIeo_DLgW-hDRZUwmJphmSjpaEKQUiSvRQv1_lOIHuLpwzuFOk2tliOlMjoWVUArGYIWrobFsQJLnQM6JvUO4WC9BeAU1KXsqR4meR1QiG1JA-vtwtP4AbDAg6XkyuXePIS5-O0uWGlmaVexfbRz67haf8d02lKdZlm7Xu3wjiuK_6gPLQTOV</recordid><startdate>20111103</startdate><enddate>20111103</enddate><creator>VLCEK, JOHANNES</creator><creator>JULIANO, DANIEL, R</creator><scope>EVB</scope></search><sort><creationdate>20111103</creationdate><title>PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF</title><author>VLCEK, JOHANNES ; JULIANO, DANIEL, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2011084926A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><toplevel>online_resources</toplevel><creatorcontrib>VLCEK, JOHANNES</creatorcontrib><creatorcontrib>JULIANO, DANIEL, R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VLCEK, JOHANNES</au><au>JULIANO, DANIEL, R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF</title><date>2011-11-03</date><risdate>2011</risdate><abstract>A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer.
La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
title | PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF |
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