PHOTOVOLTAIC MATERIALS WITH CONTROLLABLE ZINC AND SODIUM CONTENT AND METHOD OF MAKING THEREOF

A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer l...

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Bibliographische Detailangaben
Hauptverfasser:	VLCEK, JOHANNES, JULIANO, DANIEL, R
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. La cellule solaire selon l'invention comprend un substrat, une première électrode située sur le substrat, une couche absorbante semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type p dopé au sodium située sur la première électrode, une couche semi-conductrice en alliage à base de séléniure d'indium et de cuivre (CIS) de type n dopé au zinc et au sodium située sur la couche absorbante semi-conductrice de type p, et une seconde électrode située sur la couche semi-conductrice de type n.