PROCESS AND APPARATUS FOR PRODUCING A SUBSTRATE

Process for producing a solar cell substrate (1), where metal particles (3) are deposited on the surface of substrate (2). Metal particles (3) are produced by liquid flame spraying method in such a way that the mean diameter of the particles to be between 30 nm and 150 nm and the deposition process...

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Bibliographische Detailangaben
Hauptverfasser:	SKARP, JARMO, VAINIO, TOMMI
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	Process for producing a solar cell substrate (1), where metal particles (3) are deposited on the surface of substrate (2). Metal particles (3) are produced by liquid flame spraying method in such a way that the mean diameter of the particles to be between 30 nm and 150 nm and the deposition process is controlled in such a way that the average distance (dis) between particles (3) is not more than four (4) times the mean diameter of particles (3). Apparatus for carrying out such process. D'après la présente invention, un procédé de production d'un substrat de cellule solaire (1) comprend l'étape au cours de laquelle des particules métalliques (3) sont déposées sur la surface d'un substrat (2). Les particules métalliques (3) sont produites selon un procédé de pulvérisation de flammes liquides de telle manière que le diamètre moyen des particules se situe entre 30 nm et 150 nm et le procédé de dépôt est commandé de telle sorte que la distance (dis) moyenne entre les particules (3) est inférieure ou égale à quatre (4) fois le diamètre moyen des particules (3). La présente invention concerne également un appareil permettant de mettre en oeuvre ce procédé.