DEVICE FOR HOLDING SILICON MELT

Device for holding a silicon melt comprising a crucible (1; 1a; 1b), which partly surrounds an inner chamber (2) for holding the melt, with a base (3; 3a) and at least one side wall (4; 4b) made of a base material, whereby the crucible (1; 1a; 1b) comprises at least one equalising means (5) for equa...

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Bibliographische Detailangaben
Hauptverfasser:	STENZENBERGER, JOSEF, FREUDENBERG, BERNHARD, SOLHEIM, ARVE, TIMM, MICHAEL, SOERHEIM, HAAVARD, SCHOOTBRUGGE, EGBERT VAN DE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Device for holding a silicon melt comprising a crucible (1; 1a; 1b), which partly surrounds an inner chamber (2) for holding the melt, with a base (3; 3a) and at least one side wall (4; 4b) made of a base material, whereby the crucible (1; 1a; 1b) comprises at least one equalising means (5) for equalising mechanical thermal stresses. L'invention porte sur un dispositif servant à contenir une masse fondue de silicium comprenant un creuset (1; 1a; 1b), qui entoure en partie une chambre interne (2) destinée à contenir la masse fondue, comprenant une base (3; 3a) et au moins une paroi latérale (4; 4b) constituées d'un matériau de base, le creuset (1; 1a; 1b) comprenant au moins un moyen d'égalisation (5) servant à égaliser les contraintes thermiques mécaniques.