METHOD FOR PRODUCING SILICON

The invention relates to techniques for producing high-purity silicon, and in particular to methods for producing the same which comprise transferring said element by vapor transportation into a silicon halide atmosphere with the addition of hydrogen. The invention can be used in semi-conductor technologies and in the photoelectric industry for making solar panels. The technical result is a reduction of the silicon production costs without reducing the quality thereof, and a flexible process that makes it possible to readjust the production cycle without significant costs according to requirements concerning the content of one substance or another in the final material. This technical result can be achieved through a process carried out in a vacuum reactor filled with hydrogen, made of a high-purity quartz glass, and divided into four areas in each of which different temperatures can be maintained. Crystalline silicon halide is placed in a first area, technical-grade silicon in a powdery form is placed in the second area, a temperature of between 150° and 250°C is generated in the first area of the reactor, while a temperature of between 1100° and 1300° C is generated in the second area, a temperature of between 800° and 1000°C is generated in the third area, and a temperature not exceeding 150° C is generated in the fourth area. After the distillation of the entire silicon halide in the fourth area, the temperature is lowered down to 500°C in areas two and three and down to 130°C in area one while it is raised to 350°C in area four. After the distillation of the entire silicon halide in area one, the temperature is raised to 1450°C in area three, and pure molten silicon is discharged into a collector. L'invention se rapporte aux techniques de production de silicium de grande pureté, concerne notamment des procédés de production de ce dernier consistant à effectuer un transfert par transport gazeux de cet élément dans une atmosphère d'halogénures de silicium avec addition d'hydrogène, et peut être utilisée dans le domaine des semi-conducteurs, et dans l'industrie photo-électrique afin de fabriquer des panneaux solaires. Le résultat technique consiste en une réduction des coûts de production du silicium sans diminution de sa qualité, en une flexibilité du processus qui permet sans frais de réorienter le cycle de production en fonction des exigences concernant la teneur en telles ou telles substances du matériau ainsi produit. Ce résultat technique est obten