BIPOLAR TRANSISTOR

A bipolar transistor, comprising a collector (70), a base (92), and an emitter (100), in which the collector (70) comprises a relatively heavily doped region. The bipolar transistor may also comprise a relatively lightly doped region (90) adjacent the base (92). The relatively heavily doped region c...

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Bibliographische Detailangaben
Hauptverfasser:	BOWERS, DEREK, FREDERICK, DALY, PAUL, MALACHY, MCGUINNESS, PATRICK, MARTIN, DEIGNAN, ANNE, MARIA, DUNBAR, MICHAEL, THOMAS, STENSON, BERNARD, PATRICK, LANE, WILLIAM, ALLAN, BAIN, ANDREW, DAVID
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A bipolar transistor, comprising a collector (70), a base (92), and an emitter (100), in which the collector (70) comprises a relatively heavily doped region. The bipolar transistor may also comprise a relatively lightly doped region (90) adjacent the base (92). The relatively heavily doped region can be substantially omitted from an intrinsic region (110) of the transistor. L'invention concerne un transistor bipolaire, comprenant un collecteur (70), une base (92), et un émetteur (100), le collecteur (70) comprenant une région relativement lourdement dopée. Le transistor bipolaire comprend une région relativement légèrement dopée (90) adjacente à la base (92). La région relativement lourdement dopée peut être sensiblement omise d'une région intrinsèque (110) du transistor.