SILICON-RICH NITRIDE ETCH STOP LAYER FOR VAPOR HF ETCHING IN MEMS DEVICE FABRICATION

A thin silicon-rich nitride film (e.g., having a thickness in the range of around 100A to 10000A) deposited using low-pressure chemical vapor deposition (LPCVD) is used for etch stop during vapor HF etching in various MEMS wafer fabrication processes and devices. The LPCVD silicon-rich nitride film...

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Hauptverfasser:	NUNAN, THOMAS, KIERAN, TSAU, CHRISTINE, H
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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