ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE HEMT DEVICE

A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided b) an increased width asymmetric recess for the gate electrode, by a composite channel iaycr including a thin indium arsenide layer embedded in the indium gallium arsenid...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHAO, PANEANE, XU, DONG, MOHNKERN, LEE, M, SMITH, PHILLIP, M, YANG, XIAOPING, S, KONG, WENDELL
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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