LIGHT-EMITTING DIODE (VARIANTS)

The inventive light-emitting diode comprises a substrate which is made of dielectric monocrystalline diamond and has a layer of monocrystalline diamond of p-type conductivity arranged on the surface thereof. A rectangular element is formed in the layer of the p-type conductivity diamond and comprises two heavily doped regions having the same type of conductivity and situated on the opposite sides of the element, and a heavily doped region having the opposite type of conductivity, located between said two heavily doped regions and is separated therefrom by the equal in length regions of the p-type diamond. Metal contact electrodes are formed on the surface of the heavily doped regions of the two types of conductivity. In the second variant of the light-emitting diode, a strip of the alternating regions of the heavily doped diamond of the first and second conductivity types, which are separated by the p-type diamond regions, is formed on the surface of the heavily doped regions. All of the regions of the p-type conductivity diamond have the same length, and the first and the last heavily doped regions have the same conductivity type. In the third variant of the light-emitting diode, a ring system with the axial symmetry of the alternating regions of the heavily doped diamond of the first and second conductivity types, which are separated by the p-type diamond regions, is formed on the surface of the heavily doped regions. The radius of each subsequent ring pair consisting of the p-type diamond region and the heavily doped region of the first or second conductivity type differs from the radius of the previous ring pair by a value which is a multiple of the square root of a specified wavelength. Selon l'invention, une diode électroluminescente comprend un substrat en diamant diélectrique monocristallin à la surface duquel est disposée une couche de diamant monocristallin à conductivité « p ». Dans cette couche de diamant monocristallin à conductivité « p » on a formé un élément rectangulaire comportant deux régions fortement alliées possédant le même type de conductivité des côtés opposés de l'élément ainsi qu'une région fortement alliée disposées entre elles et séparée d'elles par des régions du diamant à conductivité « p » possédant un type de conductivité opposé. A la surface des régions fortement alliées de deux types de conductivité on a formé des électrodes de contact métalliques. Dans un deuxième mode de réalisation de la diode électroluminescente on a