SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING INSTALLATION
A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate (14), forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22), and thereafter forming an emitter region (30) and gettering impurities (16) b...
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| creator | FERRE I TOMAS, RAFEL |
| description | A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate (14), forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22), and thereafter forming an emitter region (30) and gettering impurities (16) by annealing the semiconductor substrate including the layer.
L'invention concerne un procédé de fabrication de dispositifs semi-conducteurs qui comprend les étapes consistant à: prévoir un substrat semi-conducteur (14); former sur le substrat semi-conducteur une couche (20) incluant un composé semi-conducteur et un additif dopant (22); et former ensuite une région d'émission (30) et réduire les impuretés (16) par effet getter en recuisant le substrat semi-conducteur incluant la couche. |
| format | Patent |
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L'invention concerne un procédé de fabrication de dispositifs semi-conducteurs qui comprend les étapes consistant à: prévoir un substrat semi-conducteur (14); former sur le substrat semi-conducteur une couche (20) incluant un composé semi-conducteur et un additif dopant (22); et former ensuite une région d'émission (30) et réduire les impuretés (16) par effet getter en recuisant le substrat semi-conducteur incluant la couche.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100429&DB=EPODOC&CC=WO&NR=2010046284A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100429&DB=EPODOC&CC=WO&NR=2010046284A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FERRE I TOMAS, RAFEL</creatorcontrib><title>SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING INSTALLATION</title><description>A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate (14), forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22), and thereafter forming an emitter region (30) and gettering impurities (16) by annealing the semiconductor substrate including the layer.
L'invention concerne un procédé de fabrication de dispositifs semi-conducteurs qui comprend les étapes consistant à: prévoir un substrat semi-conducteur (14); former sur le substrat semi-conducteur une couche (20) incluant un composé semi-conducteur et un additif dopant (22); et former ensuite une région d'émission (30) et réduire les impuretés (16) par effet getter en recuisant le substrat semi-conducteur incluant la couche.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCgOdvX1dPb3cwl1DvEPUnBxDfN0dlXwdfQLdXN0DgkN8vRzV_B1DfHwd9FRwKrU0c9FgQgzPP2CQxx9fBxDPP39eBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfLi_kYGhgYGJmZGFiaOhMXGqALnNOic</recordid><startdate>20100429</startdate><enddate>20100429</enddate><creator>FERRE I TOMAS, RAFEL</creator><scope>EVB</scope></search><sort><creationdate>20100429</creationdate><title>SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING INSTALLATION</title><author>FERRE I TOMAS, RAFEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010046284A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FERRE I TOMAS, RAFEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FERRE I TOMAS, RAFEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING INSTALLATION</title><date>2010-04-29</date><risdate>2010</risdate><abstract>A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate (14), forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22), and thereafter forming an emitter region (30) and gettering impurities (16) by annealing the semiconductor substrate including the layer.
L'invention concerne un procédé de fabrication de dispositifs semi-conducteurs qui comprend les étapes consistant à: prévoir un substrat semi-conducteur (14); former sur le substrat semi-conducteur une couche (20) incluant un composé semi-conducteur et un additif dopant (22); et former ensuite une région d'émission (30) et réduire les impuretés (16) par effet getter en recuisant le substrat semi-conducteur incluant la couche.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING INSTALLATION |
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