SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING INSTALLATION

A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate (14), forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22), and thereafter forming an emitter region (30) and gettering impurities (16) b...

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Bibliographische Detailangaben
1. Verfasser:	FERRE I TOMAS, RAFEL
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate (14), forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22), and thereafter forming an emitter region (30) and gettering impurities (16) by annealing the semiconductor substrate including the layer. L'invention concerne un procédé de fabrication de dispositifs semi-conducteurs qui comprend les étapes consistant à: prévoir un substrat semi-conducteur (14); former sur le substrat semi-conducteur une couche (20) incluant un composé semi-conducteur et un additif dopant (22); et former ensuite une région d'émission (30) et réduire les impuretés (16) par effet getter en recuisant le substrat semi-conducteur incluant la couche.