ETCH REACTOR SUITABLE FOR ETCHING HIGH ASPECT RATIO FEATURES

Embodiments of the invention provide a method and apparatus that enables plasma etching of high aspect ratio features. In one embodiment, a method for etching is provided that includes providing a substrate having a patterned mask disposed on a silicon layer in an etch reactor, providing a gas mixtu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHOU, XIAOPING, SCANLAN, DECLAN, TILGER, RON, MATYUSHKIN, ALEXANDER, LEHMANN, THORSTEN, ABOOAMERI, FARID, RUPF, JAN, OSWALD, MANFRED, MALETTA, FRANCESCO, MEYE, MARKUS, DINEV, JIVKO, LEUCKE, UWE, KOOSAU, DENIS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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