SEMICONDUCTOR DEVICES WITH EXTENDED ACTIVE REGIONS

A method of making a semiconductor device (10) is achieved in and over a semiconductor layer. A trench (18, 20, 22) is formed adjacent to a first active area (24, 26, 28, 30). The trench is filled with insulating material (32, 34, 36). A masking feature (48, 50, 52) is formed over a center portion o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FU, CHONGNG, HALL, MARK, D, ABELN, GLENN, C
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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