METHOD FOR PRODUCING A SOLAR CELL HAVING A TWO-STAGE DOPING

Method for producing solar cells with a two-stage doping (9, 11) comprising the method steps of heavy doping (50) of at Ieast a part of the solar cell substrate (1), of at least temporarily protecting doped areas (8), in which heavily doped areas (9) of the two-stage doping (9, 11) should be formed,...

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Bibliographische Detailangaben
Hauptverfasser:	HOLBIG, EVA-MARIA, MELNYK, IHOR, KELLER, STEFFEN, SCHMIDT, MICHAEL, FATH, PETER, SCHLOSSER, REINHOLD, KRUEMBERG, JENS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	Method for producing solar cells with a two-stage doping (9, 11) comprising the method steps of heavy doping (50) of at Ieast a part of the solar cell substrate (1), of at least temporarily protecting doped areas (8), in which heavily doped areas (9) of the two-stage doping (9, 11) should be formed, from an etching medium and etching back (54; 62, 64; 72, 74) unprotected doped areas (17) of the solar cell substrate (1) by means of the etching medium, whereby, for the purpose of protecting the doped areas, sacrificial structures (7) are ap¬ plied (52) on the areas (8) to be protected, which are at Ieast partly etched (54; 62, 64; 72, 74) during etching back (54; 62, 64; 72, 74) of the unprotected doped areas. La présente invention concerne un procédé de fabrication de cellules solaires qui comportent un dopage à deux étages (9, 11). Ledit procédé comprend les étapes qui consistent à doper lourdement (50) au moins une partie du substrat de cellule solaire (1), à protéger au moins temporairement des zones dopées (8), dans lesquelles des zones lourdement dopées (9) du dopage à deux étages (9, 11) doivent être formées, d'un agent de gravure et graver en retrait (54 ; 62, 64 ; 72, 74) des zones dopées non protégées (17) du substrat de cellule solaire (1) au moyen de l'agent de gravure. Dans le but de protéger les zones dopées, des structures sacrificielles (7) sont appliquées (52) sur les zones (8) destinées à être protégées, qui sont au moins partiellement gravées (54 ; 62, 64 ; 72, 74) au cours de la gravure en retrait (54 ; 62, 64 ; 72, 74) des zones dopées non protégées.