CONTACT TRENCHES FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS

Scalability of a strain-inducing mechanism on the basis of a stressed dielectric overlayer may be enhanced by forming a single stress-inducing layer (230) in combination with contact trenches, which may shield a significant amount of a non-desired stress component in the complementary transistor (22...

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Bibliographische Detailangaben

Hauptverfasser:	HOENTSCHEL, JAN, WEI, ANDY, SALZ, HEIKE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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