ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS
A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a si...
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| creator | LEE, YONG-WON XIA, LI-QUN LEE, SANG, M SHEK, MEIYEE WITTY, DEREK, R |
| description | A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.
La présente invention concerne un procédé et un appareil pour traiter un substrat. Ce procédé consiste à prendre un substrat comprenant une matière conductrice, à exécuter un traitement préalable sur la matière conductrice, à faire couler sur la matière conductrice un composé à base de silicium de façon à former une couche de siliciure, à exécuter un traitement postérieur sur la couche de siliciure, et à déposer sur le substrat une couche barrière diélectrique. |
| format | Patent |
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La présente invention concerne un procédé et un appareil pour traiter un substrat. Ce procédé consiste à prendre un substrat comprenant une matière conductrice, à exécuter un traitement préalable sur la matière conductrice, à faire couler sur la matière conductrice un composé à base de silicium de façon à former une couche de siliciure, à exécuter un traitement postérieur sur la couche de siliciure, et à déposer sur le substrat une couche barrière diélectrique.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100318&DB=EPODOC&CC=WO&NR=2009131825A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100318&DB=EPODOC&CC=WO&NR=2009131825A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, YONG-WON</creatorcontrib><creatorcontrib>XIA, LI-QUN</creatorcontrib><creatorcontrib>LEE, SANG, M</creatorcontrib><creatorcontrib>SHEK, MEIYEE</creatorcontrib><creatorcontrib>WITTY, DEREK, R</creatorcontrib><title>ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS</title><description>A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.
La présente invention concerne un procédé et un appareil pour traiter un substrat. Ce procédé consiste à prendre un substrat comprenant une matière conductrice, à exécuter un traitement préalable sur la matière conductrice, à faire couler sur la matière conductrice un composé à base de silicium de façon à former une couche de siliciure, à exécuter un traitement postérieur sur la couche de siliciure, et à déposer sur le substrat une couche barrière diélectrique.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAhydPFwDfb091Nw9HNRcPVxdQ4J8vf1dA9yDAEJevoGBPmHufq6-oUoOLmGhLu6-im4eEKUeTqD9Tj7-7mEOod4hrkq-DhGugYF8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-HB_IwMDS0NjQwsjU0cTY-JUAQC04jDS</recordid><startdate>20100318</startdate><enddate>20100318</enddate><creator>LEE, YONG-WON</creator><creator>XIA, LI-QUN</creator><creator>LEE, SANG, M</creator><creator>SHEK, MEIYEE</creator><creator>WITTY, DEREK, R</creator><scope>EVB</scope></search><sort><creationdate>20100318</creationdate><title>ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS</title><author>LEE, YONG-WON ; XIA, LI-QUN ; LEE, SANG, M ; SHEK, MEIYEE ; WITTY, DEREK, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2009131825A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, YONG-WON</creatorcontrib><creatorcontrib>XIA, LI-QUN</creatorcontrib><creatorcontrib>LEE, SANG, M</creatorcontrib><creatorcontrib>SHEK, MEIYEE</creatorcontrib><creatorcontrib>WITTY, DEREK, R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, YONG-WON</au><au>XIA, LI-QUN</au><au>LEE, SANG, M</au><au>SHEK, MEIYEE</au><au>WITTY, DEREK, R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS</title><date>2010-03-18</date><risdate>2010</risdate><abstract>A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.
La présente invention concerne un procédé et un appareil pour traiter un substrat. Ce procédé consiste à prendre un substrat comprenant une matière conductrice, à exécuter un traitement préalable sur la matière conductrice, à faire couler sur la matière conductrice un composé à base de silicium de façon à former une couche de siliciure, à exécuter un traitement postérieur sur la couche de siliciure, et à déposer sur le substrat une couche barrière diélectrique.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS |
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