METHODS FOR ETCHING THE EDGE OF A SILICON WAFER
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer. La présente invention concerne de manière générale la fabrication de tranches de silicone et, plus particulièrement, un...
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| creator | VANDAMME, ROLAND, R HOLLANDER, EUGENE, R SCHMIDT, JUDY, A ZHANG, GUOQIANG (DAVID) DOANE, THOMAS, E ERK, HENRY, F ALBRECHT, PETER, D |
| description | The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
La présente invention concerne de manière générale la fabrication de tranches de silicone et, plus particulièrement, un appareil et des procédés de gravure de bord pour graver le bord d'une tranche de silicone. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2009124060A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2009124060A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2009124060A13</originalsourceid><addsrcrecordid>eNrjZND3dQ3x8HcJVnDzD1JwDXH28PRzVwjxcFVwdXF3VfB3U3BUCPb08XT291MId3RzDeJhYE1LzClO5YXS3AzKbiBtuqkF-fGpxQWJyal5qSXx4f5GBgaWhkYmBmYGjobGxKkCAFv0JkU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHODS FOR ETCHING THE EDGE OF A SILICON WAFER</title><source>esp@cenet</source><creator>VANDAMME, ROLAND, R ; HOLLANDER, EUGENE, R ; SCHMIDT, JUDY, A ; ZHANG, GUOQIANG (DAVID) ; DOANE, THOMAS, E ; ERK, HENRY, F ; ALBRECHT, PETER, D</creator><creatorcontrib>VANDAMME, ROLAND, R ; HOLLANDER, EUGENE, R ; SCHMIDT, JUDY, A ; ZHANG, GUOQIANG (DAVID) ; DOANE, THOMAS, E ; ERK, HENRY, F ; ALBRECHT, PETER, D</creatorcontrib><description>The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
La présente invention concerne de manière générale la fabrication de tranches de silicone et, plus particulièrement, un appareil et des procédés de gravure de bord pour graver le bord d'une tranche de silicone.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091008&DB=EPODOC&CC=WO&NR=2009124060A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091008&DB=EPODOC&CC=WO&NR=2009124060A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VANDAMME, ROLAND, R</creatorcontrib><creatorcontrib>HOLLANDER, EUGENE, R</creatorcontrib><creatorcontrib>SCHMIDT, JUDY, A</creatorcontrib><creatorcontrib>ZHANG, GUOQIANG (DAVID)</creatorcontrib><creatorcontrib>DOANE, THOMAS, E</creatorcontrib><creatorcontrib>ERK, HENRY, F</creatorcontrib><creatorcontrib>ALBRECHT, PETER, D</creatorcontrib><title>METHODS FOR ETCHING THE EDGE OF A SILICON WAFER</title><description>The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
La présente invention concerne de manière générale la fabrication de tranches de silicone et, plus particulièrement, un appareil et des procédés de gravure de bord pour graver le bord d'une tranche de silicone.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3dQ3x8HcJVnDzD1JwDXH28PRzVwjxcFVwdXF3VfB3U3BUCPb08XT291MId3RzDeJhYE1LzClO5YXS3AzKbiBtuqkF-fGpxQWJyal5qSXx4f5GBgaWhkYmBmYGjobGxKkCAFv0JkU</recordid><startdate>20091008</startdate><enddate>20091008</enddate><creator>VANDAMME, ROLAND, R</creator><creator>HOLLANDER, EUGENE, R</creator><creator>SCHMIDT, JUDY, A</creator><creator>ZHANG, GUOQIANG (DAVID)</creator><creator>DOANE, THOMAS, E</creator><creator>ERK, HENRY, F</creator><creator>ALBRECHT, PETER, D</creator><scope>EVB</scope></search><sort><creationdate>20091008</creationdate><title>METHODS FOR ETCHING THE EDGE OF A SILICON WAFER</title><author>VANDAMME, ROLAND, R ; HOLLANDER, EUGENE, R ; SCHMIDT, JUDY, A ; ZHANG, GUOQIANG (DAVID) ; DOANE, THOMAS, E ; ERK, HENRY, F ; ALBRECHT, PETER, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2009124060A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>VANDAMME, ROLAND, R</creatorcontrib><creatorcontrib>HOLLANDER, EUGENE, R</creatorcontrib><creatorcontrib>SCHMIDT, JUDY, A</creatorcontrib><creatorcontrib>ZHANG, GUOQIANG (DAVID)</creatorcontrib><creatorcontrib>DOANE, THOMAS, E</creatorcontrib><creatorcontrib>ERK, HENRY, F</creatorcontrib><creatorcontrib>ALBRECHT, PETER, D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VANDAMME, ROLAND, R</au><au>HOLLANDER, EUGENE, R</au><au>SCHMIDT, JUDY, A</au><au>ZHANG, GUOQIANG (DAVID)</au><au>DOANE, THOMAS, E</au><au>ERK, HENRY, F</au><au>ALBRECHT, PETER, D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS FOR ETCHING THE EDGE OF A SILICON WAFER</title><date>2009-10-08</date><risdate>2009</risdate><abstract>The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
La présente invention concerne de manière générale la fabrication de tranches de silicone et, plus particulièrement, un appareil et des procédés de gravure de bord pour graver le bord d'une tranche de silicone.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHODS FOR ETCHING THE EDGE OF A SILICON WAFER |
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