QUANTUM UNCOOLED INFRA-RED PHOTO-DETECTOR

A photo-detector comprising: a p-doped semiconductor layer; an n-doped semiconductor layer juxtaposed with the p-doped semiconductor layer; one of an intrinsic amorphous silicon layer sandwiched between the p-doped semiconductor layer and the n-doped semiconductor layer and a depletion region formed...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BASKIN, EMANUEL, GARBER, VALERY, FAYER, ALEX
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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