SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

The present invention is a method of forming a barrier layer, which includes an insulator, on a fluorocarbon film formed on a substrate, the method including the steps of producing a plasma from a gas, forming the barrier layer on the fluorocarbon film by using the plasma and exposing the surface of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	MIYATANI, KOTARO
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention is a method of forming a barrier layer, which includes an insulator, on a fluorocarbon film formed on a substrate, the method including the steps of producing a plasma from a gas, forming the barrier layer on the fluorocarbon film by using the plasma and exposing the surface of the substrate to the plasma including a nitrogen to dope the nitrogen to the surface of the barrier layer. La présente invention porte sur un procédé de formation d'une couche barrière, qui comprend un isolant sur un film de fluorocarbone formé sur un substrat, le procédé comprenant les étapes consistant à produire un plasma à partir d'un gaz, former la couche barrière sur le film de fluorocarbone à l'aide du plasma et exposer la surface du substrat sur le plasma, comprenant de l'azote pour doper l'azote à la surface de la couche barrière.