METHOD AND SYSTEM FOR INCREASING THROUGHPUT DURING LOCATION SPECIFIC PROCESSING OF A PLURALITY OF SUBSTRATES

A method and system of location specific processing on a plurality of substrates is described. The method comprises measuring metrology data for the plurality of substrates (152). Thereafter, the method comprises computing correction data for a first substrate (152) using the metrology data, followe...

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Hauptverfasser:	CALIENDO, STEVEN, P, HOFMEESTER, NICOLAUS, J
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RESONATORS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method and system of location specific processing on a plurality of substrates is described. The method comprises measuring metrology data for the plurality of substrates (152). Thereafter, the method comprises computing correction data for a first substrate (152) using the metrology data, followed by computing correction data for a second substrate (152) using the metrology data. While computing the correction data for the second substrate (152), the method comprises applying the correction data for the first substrate (152) to the first substrate (152) using a gas cluster ion beam (GCIB) (128A). L'invention concerne un système et un procédé de traitement spécifique de l'emplacement sur une pluralité de substrats. Le procédé comprend la mesure de données de métrologie pour la pluralité de substrats (152). Ensuite, le procédé comprend le calcul de données de correction pour un premier substrat (152) en utilisant les données de métrologie, suivi par le calcul de données de correction pour un second substrat (152) en utilisant les données de métrologie. Tout en calculant les données de correction pour le second substrat (152), le procédé comprend l'application de données de correction pour le premier substrat (152) au premier substrat (152) en utilisant un faisceau ionique à agrégat de gaz (GCIB) (128A).