METHOD FOR FORMING A FILM ON A SUBSTRATE

A method for forming a film on a substrate comprising : heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The f...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	AWAD, YOUSEF, SMIRANI, RIADH, EL KHAKANI, MY ALI, DAVIES, MICHAEL, GAUMOND, ALEXANDRE, ALLEN, SEBASTIEN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method for forming a film on a substrate comprising : heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof. L'invention concerne un procédé de formation d'un film sur un substrat, comprenant les opérations consistant à: chauffer une source d'organosilane solide dans une chambre de chauffage pour former un précurseur gazeux; transférer le précurseur gazeux dans une chambre de dépôt; et faire réagir le précurseur gazeux à l'aide d'une source d'énergie pour former le film sur le substrat. Le film comprend du Si et du C, et comprend éventuellement d'autres éléments tels que N, O, F, B, P ou une combinaison de ceux-ci.