METHOD FOR LEAKAGE REDUCTION IN FABRICATION OF HIGH -DENSITY FRAM ARRAYS

A method is provided for fabricating a ferroelectric capacitor structure including a method for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The method comprises etching portions of an upper electrode, etching ferroelectric material (20), and etching a...

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Bibliographische Detailangaben
Hauptverfasser: SUMMERFELT, SCOTT, R, UDAYAKUMAR, KEZHAKKEDATH, R, MOISE, THEODORE, S, CELLI, FRANCIS, GABRIEL, SHINN, GREGORY, B
Format: Patent
Sprache:eng ; fre
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