COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE

Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solven...

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Hauptverfasser:	BISCOTTO, MARK A, COOPER, EMANUEL I, YANDERS, KEVIN P, BOWERS, WILLIAM R, SONTHALIA, PRERNA, THOMAS, NICOLE E, KORZENSKI, MICHAEL B, SPARKS, EILEEN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS CONVEYING DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HANDLING THIN OR FILAMENTARY MATERIAL HOLOGRAPHY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORIGINALS THEREFOR PACKAGES PACKAGING ELEMENTS PACKING PAINTS PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES STORING TRANSPORTING
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Zusammenfassung:	Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 °C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min -1. L'invention concerne des compositions servant à l'élimination sélective de matériaux de nitrure de silicium par rapport au polysilicium, à des matériaux d'oxyde de silicium et/ou à des matériaux de siliciure, à partir d'un appareil microélectronique comportant des matériaux de nitrure de silicium à sa surface. Les compositions d'élimination contiennent de l'acide fluorosilicique, de l'acide silicique et au moins un solvant organique. Les températures de traitement typiques sont inférieures à environ 100 °C et la sélectivité typique pour la gravure nitrure contre oxyde est d'environ 200:1 à environ 2000:1. Dans des conditions de traitement typiques, des siliciures à base de nickel et des nitrures de titane et de tantale ne sont généralement pas affectés, et les vitesses de gravure de polysilicium sont inférieures à environ 1 Å min -1.