METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER

A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface (32) of a silicon substrate (30); performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900 °C and a pressure greater th...

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Bibliographische Detailangaben

Hauptverfasser:	ADAMS, EDWARD, DENNIS, BURNHAM, JAY, SANFORD, GOUSEV, EVGENI, NAKOS, JAMES, SPIROS, SHEPARD, JOSEPH, FRANCIS, PREUSS, HEATHER, ELIZABETH
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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