MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR
The present invention relates to manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor. To increase of the removal selectivity, an aqueous solution of additives consists of polyacrylic acid and amine compounds is added the cerium ox...
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| creator | SOH, SOON-YOUNG HAHN, YOUNG-SIK MYEONG, WAN-JAE JUNG, MAN-WOO LEE, JOO-HYEONG NAM, HO-SEONG LEE, JIN-SEO AHN, GUI-RYONG |
| description | The present invention relates to manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor. To increase of the removal selectivity, an aqueous solution of additives consists of polyacrylic acid and amine compounds is added the cerium oxide slurry. The polishing slurry have a high particle stability and removal selectivity, and also less scratches after chemical mechanical polishing of semiconductor . |
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To increase of the removal selectivity, an aqueous solution of additives consists of polyacrylic acid and amine compounds is added the cerium oxide slurry. 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To increase of the removal selectivity, an aqueous solution of additives consists of polyacrylic acid and amine compounds is added the cerium oxide slurry. The polishing slurry have a high particle stability and removal selectivity, and also less scratches after chemical mechanical polishing of semiconductor .</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAQgOEuDqK-w4GzUFuEriG92IMkJ5eE6lSKxEm0UBffXhAfwOlfPv5l8XbKJ6N0TEL-CA5jx20ANmDII2gUSg74TC3CSUkkbTGA8i1QDBBsErmAYYHQKWu5hyjodQcU2KpI7OEkrDF8lwEdafZt0pFlXSxu433Om19XxdZg1N0uT88hz9N4zY_8GnquyrIpq7o5NGpf_6c-62Q7mg</recordid><startdate>20080228</startdate><enddate>20080228</enddate><creator>SOH, SOON-YOUNG</creator><creator>HAHN, YOUNG-SIK</creator><creator>MYEONG, WAN-JAE</creator><creator>JUNG, MAN-WOO</creator><creator>LEE, JOO-HYEONG</creator><creator>NAM, HO-SEONG</creator><creator>LEE, JIN-SEO</creator><creator>AHN, GUI-RYONG</creator><scope>EVB</scope></search><sort><creationdate>20080228</creationdate><title>MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR</title><author>SOH, SOON-YOUNG ; HAHN, YOUNG-SIK ; MYEONG, WAN-JAE ; JUNG, MAN-WOO ; LEE, JOO-HYEONG ; NAM, HO-SEONG ; LEE, JIN-SEO ; AHN, GUI-RYONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2008023858A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><toplevel>online_resources</toplevel><creatorcontrib>SOH, SOON-YOUNG</creatorcontrib><creatorcontrib>HAHN, YOUNG-SIK</creatorcontrib><creatorcontrib>MYEONG, WAN-JAE</creatorcontrib><creatorcontrib>JUNG, MAN-WOO</creatorcontrib><creatorcontrib>LEE, JOO-HYEONG</creatorcontrib><creatorcontrib>NAM, HO-SEONG</creatorcontrib><creatorcontrib>LEE, JIN-SEO</creatorcontrib><creatorcontrib>AHN, GUI-RYONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SOH, SOON-YOUNG</au><au>HAHN, YOUNG-SIK</au><au>MYEONG, WAN-JAE</au><au>JUNG, MAN-WOO</au><au>LEE, JOO-HYEONG</au><au>NAM, HO-SEONG</au><au>LEE, JIN-SEO</au><au>AHN, GUI-RYONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR</title><date>2008-02-28</date><risdate>2008</risdate><abstract>The present invention relates to manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor. To increase of the removal selectivity, an aqueous solution of additives consists of polyacrylic acid and amine compounds is added the cerium oxide slurry. The polishing slurry have a high particle stability and removal selectivity, and also less scratches after chemical mechanical polishing of semiconductor .</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES |
| title | MANUFACTURING METHODS OF FINE CERIUM OXIDE PARTICLES AND ITS SLURRY FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR |
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